© Semiconductor Components Industries, LLC, 1997

October, 2016 − Rev. 11

1

Publication Order Number:

BAS40LT1/D

BAS40L, SBAS40L

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

40

V

Forward Power Dissipation

Derate above 25

°C

225

1.8

mW

mW/

°C

Operating Junction and Storage

Temperature Range

− 55 to +150

°C

Forward Continuous Current

120

mA

Forward Surge Current

t

v 1 s

t

v 10 ms

200

600

mA

Thermal Resistance (Note 1)

Junction−to−Ambient (Note 2)

508

311

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−4 @ minimum pad.

2. FR−4 @ 1.0 x 1.0 in pad.

Device

Package

ORDERING INFORMATION

SOT−23 (TO−236)

CASE 318

STYLE 8

40 VOLTS

SCHOTTKY BARRIER DIODES

MARKING DIAGRAM

3

CATHODE

1

ANODE

B1 M

G

G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAS40LT1G,

SBAS40LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

B1 = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

BAS40LT3G,

SBAS40LT3G

SOT−23

(Pb−Free)

10,000 /

Tape & Reel

www.onsemi.com