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IXTH15N70 Datasheet(PDF) 1 Page - InterFET Corporation

Part # IXTH15N70
Description  N-Channel Enhancement Mode
PDF  2 Pages
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Manufacturer  INTERFET [InterFET Corporation]
Direct Link  http://www.interfet.com
Logo INTERFET - InterFET Corporation

IXTH15N70 Datasheet(HTML) 1 Page - InterFET Corporation

  IXTH15N70 Datasheet HTML 1Page - InterFET Corporation IXTH15N70 Datasheet HTML 2Page - InterFET Corporation  
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IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
700
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
700
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25 °C15
A
I
DM
T
C = 25°C, pulse width limited by TJM
60
A
P
D
T
C = 25 °C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6g
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
N-Channel Enhancement Mode
IXTH 15N70 V
DSS
= 700 V
MegaMOSTMFET
I
D (cont)
= 15 A
R
DS(on)
= 0.45
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 250 µA
700
V
V
GS(th)
V
DS
= V
GS, ID = 250 µA
2
4.5
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J = 25°C
200
µA
V
GS = 0 V
T
J = 125°C1
mA
R
DS(on)
V
GS
= 10 V, I
D = 0.5 • ID25
0.45
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
Features
q
International standard package
JEDEC TO-247 AD
q
Low R
DS (on) HDMOS
TM process
q
Rugged polysilicon gate cell structure
q
High commutating dv/dt rating
q
Fast switching times
Applications
q
Switch-mode and resonant-mode
power supplies
q
Motor controls
q
Uninterruptible Power Supplies (UPS)
q
DC choppers
Advantages
q
Easy to mount with 1 screw
(isolated mounting screw hole)
q
Space savings
q
High power density
94503C(5/96)
D (TAB)


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