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WFP650 Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFP650 Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  WFP650 WFP650 WFP650 WFP650 Rev.A Jul.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Features � 28A, 200v, RDS(on)=0.09Ω @VGS=10V � Low gate charge (typical 95 nC) � Low crss (typical 75 pF) � Fast switching � 100% avalanche tested � Improved dv/dt capability General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary , planar,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching Performance , and with stand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switching DC/DC converters, Switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain-Source Voltage 200 V ID Drain Current -Continuous(TC=25℃) 28 A -Continuous(TC=100℃) 17.7 A IDM Drain Current -Pulsed (Note 1) 112 A VGSS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy (Note 2) 600 mJ IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 15.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation(TC=25℃) 156 W -Derate above25℃ 1.25 W/℃ TJ,TSTG Operating and Storage Temperature Range -55~150 ℃ TL Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance,Junction-to-Case - - 0.8 ℃/W RQCS Thermal Resistance,Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance,Junction-Ambient - - 62.5 ℃/W |
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