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MBR120VLSF Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBR120VLSF
Description  Surface Mount Schottky Power Rectifier
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR120VLSF Datasheet(HTML) 2 Page - ON Semiconductor

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MBR120VLSF, NRVB120VLSF
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
V
Average Rectified Forward Current
(Rated VR) TL = 119°C
IF(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM
45
A
Storage Temperature Range
Tstg
−65 to +125
°C
Operating Junction Temperature
TJ
−65 to +125
°C
Voltage Rate of Change (Rated VR)
dv/dt
1000
V/
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
TJ = 255C
TJ = 855C
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 0.1 A)
(IF = 0.5 A)
(IF = 1.0 A)
VF
0.275
0.315
0.340
0.205
0.270
0.300
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage)
IR
0.60
15
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2%.



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