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MBR120VLSF Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR120VLSF Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MBR120VLSF, NRVB120VLSF http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (Rated VR) TL = 119°C IF(AV) 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 45 A Storage Temperature Range Tstg −65 to +125 °C Operating Junction Temperature TJ −65 to +125 °C Voltage Rate of Change (Rated VR) dv/dt 1000 V/ ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Symbol TJ = 255C TJ = 855C Unit Maximum Instantaneous Forward Voltage (Note 3) (IF = 0.1 A) (IF = 0.5 A) (IF = 1.0 A) VF 0.275 0.315 0.340 0.205 0.270 0.300 V Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage) IR 0.60 15 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. |
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