© Semiconductor Components Industries, LLC, 2016

June, 2016 − Rev. 11

1

Publication Order Number:

BAS21HT1/D

BAS21HT1G, BAS21HT3G,

NSVBAS21HT1G,

NSVBAS21HT3G

High Voltage

Switching Diode

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

250

Vdc

Repetitive Peak Reverse Voltage

250

Vdc

Peak Forward Current

200

mAdc

Repetitive Peak Forward Current

500

mA

Non−Repetitive Peak Forward Surge

Current, 60 Hz

625

mAdc

Non−Repetitive Peak Forward Current

surge)

t = 1

ms

t = 10

ms

t = 100

ms

t = 1 ms

t = 1 s

20

20

10

4

1

A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

Derate above 25

°C

200

1.57

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

635

°C/W

Junction and Storage Temperature

Range

−55 to

+150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 Minimum Pad

HIGH VOLTAGE

SWITCHING DIODE

Device

Package

ORDERING INFORMATION

SOD−323

CASE 477

STYLE 1

1

CATHODE

2

ANODE

www.onsemi.com

MARKING

DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAS21HT1G,

NSVBAS21HT1G

SOD−323

(Pb−Free)

3000 / Tape & Reel

JS M

G

G

1

2

JS

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

BAS21HT3G,

NSVBAS21HT3G

SOD−323

(Pb−Free)

10000 / Tape &

Reel