© 2004 IXYS All rights reserved

1 - 3

IXYS reserves the right to change limits, test conditions and dimensions.

I

FAV

= 30 A

V

t

rr

= 30/35 ns

V

RSM

V

RRM

Type

V

V

600

600

DSEP 29-06A

600

600

DSEP 29-06AS

600

600

DSEP 29-06B

Symbol

Conditions

Maximum Ratings

I

FRMS

35

A

I

FAVM

rect., d = 0.5; T

30

A

T

= 125°C

30

A

I

FSM

T

250

A

(Version B)

200

A

E

AS

T

0.2

mJ

I

I

AR

V

0.1

A

T

VJ

-55...+175

°C

T

VJM

175

°C

T

stg

-55...+150

°C

P

tot

T

165

W

M

d

0.4...0.6

Nm

Weight

typical

2

g

Symbol

Conditions

Characteristic max. Values

Version A

Version B

I

R

①

T

25°C; V

250

250

µA

T

12

mA

V

F

②

I

T

1.26

1.58

V

T

25°C

1.61

2.52

V

R

thJC

0.9

0.9

K/W

R

thCH

typ.

0.5

0.5

K/W

t

rr

typ.

I

35

30

ns

V

I

RM

typ.

V

I

6

4

A

-di

with soft recovery

Features

International standard package

• Planar passivated chips

• Very short recovery time

l

Extremely low switching losses

• Low I

• Soft recovery behaviour

• Epoxy meets UL 94V-0

Applications

• Antiparallel diode for high frequency

switching devices

• Antisaturation diode

• Snubber diode

• Free wheeling diode in converters

and motor control circuits

• Rectifiers in switch mode power

supplies (SMPS)

• Inductive heating

• Uninterruptible power supplies (UPS)

• Ultrasonic cleaners and welders

Advantages

• Avalanche voltage rated for reliable

operation

• Soft reverse recovery for low

EMI/RFI

• Low I

- Power dissipation within the diode

- Turn-onlossinthecommutatingswitch

Dimensions see Outlines.pdf

Pulse test:

Data according to IEC 60747 and per diode unless otherwise specified.

A = Anode, C = Cathode, TAB = Cathode

C

A

TO-220 AC

C (TAB)

C (TAB)

A

A

TO-263

C

A

DSEP 29-06A DSEP 29-06AS

DSEP 29-06B