IRK.105 Series

3

Bulletin I27133 rev. I 09/04

www.irf.com

T

J

Junction operating

temperature range

Storage temp. range

- 40 to 150

R

thJC

Max. internal thermal

resistance, junction

0.135

Per module, DC operation

to case

R

thCS

Typical thermal resistance

case to heatsink

T

Mounting torque ± 10%

to heatsink

busbar

3

wt

Approximate weight

110 (4)

gr (oz)

Case style

TO-240AA

JEDEC

Thermal and Mechanical Specifications

Parameters

IRK.105

Units

Conditions

- 40 to 130

0.1

5

(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.

°C

K/W

Nm

Mounting surface flat, smooth and greased

I

RRM

Max. peak reverse and

I

DRM

off-state leakage current

20

mA

T

o

C, gate open circuit

V

INS

RMS isolation voltage

2500 (1 min)

50 Hz, circuit to base, all terminals

3500 (1 sec)

shorted

dv/dt Max. critical rate of rise

T

o

C, linear to 0.67 V

of off-state voltage (5)

gate open circuit

500

V/µs

Triggering

Blocking

V

P

GM

Max. peak gate power

12

P

3

I

GM

Max. peak gate current

3

A

-V

GM

Max. peak negative

gate voltage

V

GT

Max. gate voltage

4.0

required to trigger

2.5

1.7

I

GT

Max. gate current

270

required to trigger

150

mA

80

V

GD

Max. gate voltage

that will not trigger

I

GD

Max. gate current

that will not trigger

0.25

V

6mA

Anode supply = 6V

resistive load

Anode supply = 6V

resistive load

W

V

10

T

o

C,

T

o

C,

rated V

Parameters

IRK.105

Units

Conditions

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the spread

of the compound

Parameters

IRK.105

Units

Conditions

Sine half wave conduction

Rect. wave conduction

Devices

Units

IRK.105

0.04

0.05

0.06

0.08

0.12

0.03

0.05

0.06

0.08

0.12

°C/ W

∆R Conduction (per Junction)