unless otherwise specified

HFP4N65F / HFS4N65F

650V N-Channel MOSFET

Oct 2016

Parameter

Value

Unit

650

V

4A

3

8.5

nC

Key Parameters

Features

Symbol

Parameter

TO-220

TO-220F

Unit

V

DSS

Drain-Source Voltage

650

V

I

D

Drain Current

– Continuous (T

)

4.0

4.0 *

A

Drain Current

– Continuous (T

)

2.5

2.5 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

16

16 *

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

70

mJ

I

AR

Avalanche Current

(Note 1)

4.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

11

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

)

- Derate above 25

110

35

W

0.88

0.28

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Symbol

Parameter

TO-220

TO-220F

Unit

R

JC

Thermal Resistance, Junction-to-Case, Max.

1.15

3.6

/W

R

CS

Thermal Resistance, Case-to-Sink, Typ.

0.5

--

/W

R

JA

Thermal Resistance, Junction-to-Ambient, Max.

62.5

62.5

/W

* Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

HFP4N65F

TO-220

HFS4N65F

TO-220F

Symbol

G

D

S

G

D

S

Originative New Design

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

100% Avalanche Tested

RoHS Compliant