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MMBT3904T Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Part # MMBT3904T
Description  NPN SWITCHING TRANSISTOR
PDF  4 Pages
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

MMBT3904T Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

  MMBT3904T Datasheet HTML 1Page - Galaxy Semi-Conductor Holdings Limited MMBT3904T Datasheet HTML 2Page - Galaxy Semi-Conductor Holdings Limited MMBT3904T Datasheet HTML 3Page - Galaxy Semi-Conductor Holdings Limited MMBT3904T Datasheet HTML 4Page - Galaxy Semi-Conductor Holdings Limited  
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Production specification
NPN SWITCHING TRANSISTOR
MMBT3904T
H014
www.gmicroelec.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
Collector-base breakown voltage
IC=10μA,IE=0
60
V(BR)CEO
Collector- emitter breakown voltage IC=1.0mA,IB=0
40
V(BR)BEO
Emitter-base breakown voltage
IE=10μA,IC=0
6
ICBO
Collector cut-off current
IE=0,VCB=30V
50
nA
IEBO
Emitter cut-off current
IC=0,VEB=5V
50
nA
ICEX
collector cut-off current
VCE=30V,VEB(OFF)=3.0V
50
nA
IBL
Base cut-off current
VCE=30V, VEB(OFF)=3.0V
50
nA
hFE
DC current gain
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
40
70
100
60
30
300
IC=10mA; IB=1mA
200
mV
VCE（sat）
collector-emitter saturation voltage
IC=50mA; IB=5mA
300
mV
IC=10mA; IB=1mA
650
850
mV
VBE（sat）
base-emitter saturation voltage
IC=50mA; IB=5mA
950
mV
Cobo
Output capacitance
IE=0,VCB=5V,f=1MHz
4
pF
Cibo
Input capacitance
IC=0,VBE=0.5V,f =1MHz
8
pF
fT
transition frequency
IC=10mA,VCE =20V,f=100MHz
300
MHz
NF
noise figure
IC=100μA,VCE =5V,
RS =1kΩ;f =1.0MHz
5
dB
td
delay time
-
35
ns
tr
rise time
IC=10mA,IB1=1mA,VBE(off)=-0.5V
VCC=3.0V
-
35
ns
ts
storage time
VCC=3.0V, IC=10mA
-
200
ns
tf
fall time
IB1=IB2=1mA
-
50
ns



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