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© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C85

V

V

DGR

T

J

= 25

°C to 150°C; R

85

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C80

A

I

L(RMS)

Lead current limit

75

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

320

A

I

AR

T

C

= 25

°C80

A

E

AR

T

C

= 25

°C50

mJ

E

AS

2.5

J

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

300

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt

Preliminary data sheet

Features

• International standard packages

• Low R

DS (on)

• Rated for unclamped Inductive load

switching (UIS)

• Molding epoxies meet UL 94 V-0

flammability classification

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

85

V

V

GS(th)

V

DS

= V

2.0

4.0

V

I

GSS

V

±100

nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C50

mA

V

T

J

= 125

°C1

mA

R

DS(on)

V

9m

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

TO-247 AD (IXFH)

G = Gate

D

= Drain

S = Source TAB = Drain

Power MOSFETs

TO-268 (IXFT) Case Style

(TAB)

G

S

V

DSS

= 85 V

I

D25

= 80 A

R

DS(on)

=9 m

W

t

IXFH 80N085

IXFT 80N085

(TAB)

98709 (03/24/00)

IXYS reserves the right to change limits, test conditions, and dimensions.