STF4N90K5 datasheet(3/13 Pages) STMICROELECTRONICS

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STF4N90K5

Electrical ratings

DocID029957 Rev 2

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

4(1)

Drain current (continuous) at TC = 100 °C

2.5(1)

ID(2)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt (3)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

2500

Operating junction temperature range

- 55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Limited by package

(2)Pulse width limited by safe operating area

(3)ISD ≤ 4 A, di/dt ≤ 100 A/μs; VDS peak < V(BR)DSS, VDD = 450 V.

(4)VDS ≤ 720 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

6.25

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

160

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