STPS30H100DJF datasheet(3/8 Pages) STMICROELECTRONICS

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STPS30H100DJF

Characteristics

Doc ID 023024 Rev 1

3/8

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

P(W)

F(AV)

δ = 0.05

δ =Tp/T

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

(A)

F(AV)

100

125

150

Rth(j -a)=Rth(j-c)

δ=tp/T

(°C)

amb

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4.

Reverse leakage current versus

reverse voltage applied

(typical values)

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

t (s)

I (mA)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

203040

6070

8090

100

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

V (V)

Figure 5.

Junction capacitance versus

reverse voltage applied

(typical values)

Figure 6.

Forward voltage drop versus

forward current

C(pF)

100

1000

10000

100

F=1MHz

Vosc =30mVRMS

Tj=25°C

V (V)

(A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

(V)

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