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STPSC12C065-Y Datasheet(PDF) 1 Page - STMicroelectronics |
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STPSC12C065-Y Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  This is information on a product in full production. January 2015 DocID027332 Rev 1 1/8 STPSC12C065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • PPAP capable • ECOPACK®2 compliant component Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications. Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value IF(AV) 12 A VRRM 650 V Tj (max) 175 °C www.st.com |
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