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STU6N90K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STU6N90K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  November 2016 DocID029950 Rev 1 1/12 This is information on a product in full production. www.st.com STU6N90K5 N- channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in an IPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STU6N90K5 900 V 1.10 Ω 6 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STU6N90K5 6N90K5 IPAK Tube 3 2 1 TAB IPAK |
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