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FERD40U50C Datasheet(PDF) 2 Page - STMicroelectronics

Part # FERD40U50C
Description  Reduced leakage current
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

FERD40U50C Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
FERD40U50C
2/8
DocID027943 Rev 1
1
Characteristics
When diodes 1 and 2 are used simultaneously:
Tj(diode1) = P (diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.329 x IF(AV) + 0.007 IF
2
(RMS)
Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
50
V
IF(RMS)
Forward rms current
40
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 120 °C
Per diode
20
A
Tc = 90 °C
Per device
40
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
250
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
(1)
Maximum operating junction temperature
175
°C
1.
condition to avoid thermal runaway for a diode on its own heatsink.
dP tot
dTj
---------------
1
Rth j
a
–
()
--------------------------
<
Table 3. Thermal resistance
Symbol
Parameter
Value (max)
Unit
Rth(j-c)
Junction to case
Per diode
4.1
°C/W
Total
3.3
Rth(c)
Coupling
2.4
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
0.8
mA
Tj = 125 °C
30
60
mA
Tj = 25 °C
VR = 35 V
460
µA
Tj = 125 °C
20
40
mA
VF
(2)
Forward voltage drop
Tj = 125 °C
IF = 5 A
0.25
V
Tj = 125 °C
IF = 10 A
0.33
Tj = 25 °C
IF = 15 A
0.41
0.46
Tj = 125 °C
0.39
0.43
Tj = 25 °C
IF = 20 A
0.44
0.49
Tj = 125 °C
0.43
0.48
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%



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