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STB100N6F7 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB100N6F7
Description  N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a D²PAK package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB100N6F7 Datasheet(HTML) 3 Page - STMicroelectronics

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DocID027210 Rev 2
3/15
STB100N6F7
Electrical ratings
15
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
100
A
ID
Drain current (continuous) at TC = 100 °C
75
A
IDM
(1)
1.
Pulse width is limited by safe operating area
Drain current (pulsed)
400
A
PTOT
Total dissipation at TC = 25 °C
125
W
EAS
(2)
2.
Starting Tj =25 °C, ID = 20 A, VDD = 30 V
Single pulse avalanche energy
200
mJ
Tj
Operating junction temperature
- 55 to 175
°C
Tstg
Storage temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.2
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu
thermal resistance junction-pcb
30
°C/W



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