This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

June 2014

DocID025909 Rev 2

1/19

STD11N50M2,

STF11N50M2

N-channel 500 V, 0.45

Ω typ,8 A, MDmesh II Plus™ low Qg

Power MOSFETs in DPAK and TO-220FP packages

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q

g

. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM15572v1

, TAB

TO-220FP

DPAK

1

3

TAB

1

2

3

Order codes

STD11N50M2

550 V

0.53

Ω

8 A

STF11N50M2

Table 1. Device summary

Order codes

Marking

Package

Packaging

STD11N50M2

11N50M2

DPAK

Tape and reel

STF11N50M2

TO-220FP

Tube

www.st.com