STF10N60M2 datasheet(3/13 Pages) STMICROELECTRONICS

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STF10N60M2

Electrical ratings

DocID024712 Rev 4

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at Tcase = 25 °C

7.5

Drain current (continuous) at Tcase = 100 °C

4.9

IDM(2)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt(3)

Peak diode recovery voltage slope

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

VISO(5)

Insulation withstand voltage (RMS) from all three leads to

external heat sink

2500

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

(1)Limited by package.

(2)Pulse limited by safe operating area.

(3) ISD ≤ 7.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V

(4) VDS ≤ 480 V.

(5)t = 1 s; TC = 25 °C.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

1.5

EAS(2)

Single pulse avalanche energy

110

Notes:

(1) Pulse width limited by Tjmax.

(2) Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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