LET9045F datasheet(1/10 Pages) STMICROELECTRONICS

Part #	LET9045F

Description	RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

PDF	10 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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1 / 10 page

April 2011

Doc ID 16592 Rev 3

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10

LET9045F

RF power transistor from the LdmoST family

of n-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT (@28 V) = 45 W with 18.5 dB gain @ 960

MHz

■ POUT (@36V) = 70 W with 18.5 dB gain @ 960

MHz

■ BeO free package

■ In compliance with the 2002/95/EC European

directive

Description

The LET9045F is a common source n-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The LET9045F is designed for high gain

and broadband performance operating in

common source mode at 28 V. It is ideal for base

station applications requiring high linearity.

Figure 1.

Pin out

M250

epoxy sealed

1

3

2

1. Drain

2. Gate

3. Source

Table 1.

Device summary

Order code

Package

Branding

LET9045F

M250

LET9045F

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LET9045F Datasheet(PDF) 1 Page - STMicroelectronics

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