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STAC2932B Datasheet(PDF) 1 Page - STMicroelectronics |
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STAC2932B Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  This is information on a product in full production. January 2014 DocID15497 Rev 6 1/14 STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Figure 1. Pin connection Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • P OUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European directive • ST air cavity packaging technology - STAC™ package Description The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC ™ . STAC244B Air cavity 1 1 3 3 2 1. Drain 3. Gate 2. Source (bottom side) Table 1. Device summary Order code Marking Base qty. Package Packaging STAC2932BW STAC2932 (1) 20 STAC244B Tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. www.st.com |
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Similar Description - STAC2932B |
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