DocID023574 Rev 5

5/16

STD26P3LLH6

Electrical characteristics

16

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

Table 7. Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 24 V, I

D

= 1.5 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see Figure 13)

-15

-

ns

t

r

Rise time

-

15

-

ns

t

d(off)

Turn-off delay time

-

24

-

ns

t

f

Fall time

-

21

-

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

12

A

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

48

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 12 A, V

GS

= 0

-

1.1

V

t

rr

Reverse recovery time

I

SD

= 12 A,

di/dt = 100 A/μs,

V

DD

= 16 V

(see Figure 15)

-15

ns

Q

rr

Reverse recovery charge

-

6.5

nC

I

RRM

Reverse recovery current

-

0.9

A