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STFI20NK50Z Datasheet(PDF) 1 Page - STMicroelectronics |
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STFI20NK50Z Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() This is information on a product in full production. March 2012 Doc ID 019007 Rev 3 1/13 13 STFI20NK50Z N-channel 500 V, 0.23 Ω, 17 A Zener-protected SuperMESH™ Power MOSFET in I²PAKFP package Datasheet — production data Features ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Applications ■ Switching applications Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well- established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID PTOT STFI20NK50Z 500 V < 0.27 Ω 17 A 40 W I2PAKFP 1 2 3 (TO-281) D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STFI20NK50Z 20NK50Z I2PAKFP (TO-281) Tube www.st.com |
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