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IPN2M50T-H Datasheet(PDF) 19 Page - STMicroelectronics |
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IPN2M50T-H Datasheet(HTML) 19 Page - STMicroelectronics |
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19 / 25 page ![]() STIPN2M50T-H Application circuit example DocID028651 Rev 5 19/25 Table 15: Recommended operating conditions Symbol Parameter Test conditions Min. Typ. Max. Unit VPN Supply voltage Applied among P-Nu, Nv, Nw 300 400 V VCC Control supply voltage Applied to VCC-GND 13.5 15 18 V VBS High-side bias voltage Applied to VBOOTi-OUTi for i = U, V, W 13 18 V tdead Blanking time to prevent arm- short For each input signal 1 µs fPWM PWM input signal -40 °C < Tc < 100 °C -40 °C < Tj < 125 °C 25 kHz TC Case operation temperature 100 °C |
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