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STL6P3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL6P3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() November 2014 DocID023668 Rev 3 1/15 This is information on a product in full production. www.st.com STL6P3LLH6 P- channel 30 V, 0.024 Ω typ., 6 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID PTOT STL6P3LLH6 30 V 0.03 Ω 6 A 2.9 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STL6P3LLH6 6P3L PowerFLAT TM 3.3 x 3.3 Tape and reel For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. 1 2 3 4 PowerFL A T™ 3.3 x 3.3 |
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