STL7N6LF3 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL7N6LF3

4/15

DocID027038 Rev 4

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On/Off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID

= 250 μA

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 60 V

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS , ID

= 250 μA

2.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 3 A

mΩ

VGS = 5 V, ID = 3 A

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

432

Coss

Output capacitance

Crss

Reverse transfer capacitance

10.5

Total gate charge

VDD = 30 V, ID = 6.5 A,

VGS = 0 to 10 V

(see Figure 13: "Test circuit

for gate charge behavior")

8.7

Qgs

Gate-source charge

1.9

Qgd

Gate-drain charge

1.9

Intrinsic gate resistance

f =1 MHz, ID=0 A

6.3

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 3 A,

= 4.7 Ω, VGS = 10 V

(see Figure 12: "Test circuit

for resistive load switching

times" and Figure 17:

"Switching time waveform")

6.7

Rise time

10.4

td(off)

Turn-off delay time

32.4

Fall time

5.4

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