START499ETR datasheet(4/14 Pages) STMICROELECTRONICS

Part #	START499ETR

Description	NPN RF silicon transistor

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

START499ETR

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Electrical characteristics

Table 4.

Electrical characteristics (tJ = 25 °C, unless otherwise specified)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

ICBO

Collector cutoff current

VCB = 5 V, IE = 0 A

1.2

µA

IEBO

Emitter-base cutoff current

VEB = 1.5 V, IC = 0 A

120

µA

hFE

DC current gain

IC = 160 mA, VCE = 4 V

160

Power gain

IC = 200 mA, VCE = 3 V,

f = 1.8 GHz

P-1dB

1dB compression point

IC = 200 mA,VCE = 3 V,

f = 1.8 GHz

23.5

dBm

IP3

Ouput third order intercept

point

IC = 200 mA, VCE = 3 V,

f = 1.8 GHz

33.5

dBm

Noise figure

IC = 200 mA, VCE = 3 V,

f = 1.8 GHz

3.3

Table 5.

Quick reference data

Mode of operation

f (GHz)

VCE (V)

PL (dBm)

GP (dB)

η (%)

Class-AB (Icq = 5 mA)

1.9

3.6

≤ 12

typ. 68

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