STGWT20V60DF datasheet(4/23 Pages) STMICROELECTRONICS

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Electrical characteristics

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF

4/23

DocID024360 Rev 3

Electrical characteristics

= 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)CES

Collector-emitter

breakdown voltage

= 0)

= 2 mA

600

CE(sat)

Collector-emitter saturation

voltage

= 15 V, I

= 20 A

1.8

2.2

= 15 V, I

= 20 A

= 125 °C

2.15

= 15 V, I

= 20 A

= 175 °C

2.3

Forward on-voltage

= 20 A

1.7

2.2

= 20 A T

= 125 °C

1.55

= 20 A T

= 175 °C

1.3

GE(th)

Gate threshold voltage

= V

, I

= 1 mA

CES

Collector cut-off current

= 0)

= 600 V

μA

GES

Gate-emitter leakage

current (V

= 0)

= ± 20 V

250

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ies

Input capacitance

= 25 V, f = 1 MHz,

= 0

-2800

oes

Output capacitance

110

res

Reverse transfer

capacitance

-64

Total gate charge

= 480 V, I

= 20 A,

= 15 V, see

Figure 29

-116

Gate-emitter charge

Gate-collector charge

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