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STGB30V60DF Datasheet(PDF) 2 Page - STMicroelectronics |
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STGB30V60DF Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 22 page ![]() Electrical ratings STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 2/22 DocID024361 Rev 4 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 °C 60 A I C Continuous collector current at T C = 100 °C 30 A I CP (1) 1. Pulse width limited by maximum junction temperature. Pulsed collector current 120 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 °C 60 A I F Continuous forward current at T C = 100 °C 30 A I FP (1) Pulsed forward current 120 A P TOT Total dissipation at T C = 25 °C 258 W T STG Storage temperature range - 55 to 150 °C T J Operating junction temperature - 55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit R thJC Thermal resistance junction-case IGBT 0.58 °C/W R thJC Thermal resistance junction-case diode 2.08 °C/W R thJA Thermal resistance junction-ambient 50 °C/W |
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