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STGP30H65F Datasheet(PDF) 1 Page - STMicroelectronics |
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STGP30H65F Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  This is information on a product in full production. December 2013 DocID025631 Rev 1 1/13 13 STGP30H65F Trench gate field-stop IGBT, H series 650 V, 30 A high speed Datasheet - production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated Applications • Inverter • UPS • PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. 1 2 3 TO-220 TAB C (2, TAB) G (1) E (3) Table 1. Device summary Order codes Marking Package Packaging STGP30H65F GP30H65F TO-220 Tube www.st.com |
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