STGIPQ3H60T-HZ datasheet(11/26 Pages) STMICROELECTRONICS

11 / 26 page

STGIPQ3H60T-HL, STGIPQ3H60T-HZ

Electrical characteristics

DocID027219 Rev 5

11/26

Table 13: Sense comparator characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Iib

Input bias current

VCIN = 1 V

3.1

µA

Vod

Open-drain low level output

voltage

Iod = 3 mA

0.5

RON_OD

Open-drain low level output

Iod = 3 mA

166

Ω

RPD_SD

pull-down resistor (1)

125

kΩ

td_comp

Comparator delay

T/ SD /OD pulled to 5 V

through 100 kΩ resistor

130

Slew rate

CL = 180 pF; Rpu

= 5 kΩ

V/µs

tsd

Shutdown to high / low-side

driver propagation delay

VOUT = 0, Vboot = VCC,

VIN = 0 to 3.3 V

125

tisd

Comparator triggering to high /

low-side driver turn-off

propagation delay

Measured applying a

voltage step from 0 V to

3.3 V to pin CIN

200

Notes:

(1)Equivalent values as a result of the resistances of three drivers in parallel.

Table 14: Truth table

Conditions

Logic input (VI)

Output

T/ SD /OD

LIN

HIN

LVG

HVG

Shutdown enable half-bridge tri-state

X(1)

Interlocking half-bridge tri-state

0 “logic state” half-bridge tri-state

1 “logic state” low-side direct driving

1 “logic state” high-side direct driving

Notes:

(1)X: don’t care.

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