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STL19N60DM2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL19N60DM2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() August 2014 DocID026785 Rev 1 1/13 STL19N60DM2 N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - preliminary data Figure 1. Internal schematic diagram Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. D(3) G(1) S(2) AM01476v6 Order code VDS @ TJmax RDS(on)max ID STL19N60DM2 650 V 0.320 Ω 11 A Table 1. Device summary Order code Marking Package Packaging STL19N60DM2 19N60DM2 PowerFLAT™ 8x8 HV Tape and reel www.st.com |
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