DocID023669 Rev 3

3/15

STL30P3LLH6

Electrical ratings

1

Electrical ratings

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DS

Drain-source voltage

30

V

V

GS

Gate-source voltage

± 20

V

I

D

(1)

1.

The value is rated according to R

thj-c

Drain current (continuous) at T

C

= 25 °C

30

A

I

D

(1)

Drain current (continuous) at T

C

= 100 °C

18.75

A

I

D

(2)

2.

This value is rated according to R

thj-pcb

Drain current (continuous) at T

pcb

= 25 °C

9

A

I

D

(2)

Drain current (continuous) at T

pcb

= 100 °C

6.4

A

I

DM

(2)(3)

3.

Pulse width is limited by safe operating area

Drain current (pulsed)

36

A

P

TOT

(1)

Total dissipation at T

C

= 25 °C

75

W

P

TOT

(2)

Total dissipation at T

pcb

= 25 °C

4.8

W

Derating factor

(2)

0.03

W/°C

T

stg

Storage temperature

- 55 to 175

°C

T

j

Max. operating junction temperature

175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case max

2.00

°C/W

R

thj-pcb

(1)

1.

When mounted on FR-4 board of 1inch², 2oz Cu, steady state

Thermal resistance junction-pcb, single operation

31.3

°C/W