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STP80N6F6 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP80N6F6
Description  Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80N6F6 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP80N6F6
4/12
DocID023470 Rev 2
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 250 μA60
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= 60 V
1
μA
V
DS
= 60 V, T
C
=125 °C
100
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V
± 100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA3
4.5
V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 40 A
4.4
5
m
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
8325
-
pF
C
oss
Output capacitance
-
500
-
pF
C
rss
Reverse transfer
capacitance
-400
-
pF
Q
g
Total gate charge
V
DD
= 30 V, I
D
= 80 A,
V
GS
= 10 V
-147
-
nC
Q
gs
Gate-source charge
-
44
-
nC
Q
gd
Gate-drain charge
-
46
-
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 30 V, I
D
= 40 A
R
G
=4.7
Ω V
GS
= 10 V
-40
-
ns
t
r
Rise time
71
ns
t
d(off)
Turn-off-delay time
-
132
-
ns
t
f
Fall time
-
40
-
ns



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