June 2015

DocID025025 Rev 3

1/12

This is information on a product in full production.

www.st.com

STR1P2UH7

P-

channel 20 V, 0.087 Ω typ., 1.4 A STripFET™ H7

Power MOSFET in a SOT-23 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STR1P2UH7

20 V

0.1 Ω @ 4.5

1.4 A



Very low on-resistance



Very low capacitance and gate charge



High avalanche ruggedness

Applications



Switching applications

Description

This P-channel Power MOSFET utilizes the

STripFET H7 technology with a trench gate

structure combined with extremely low on-

resistance. The device also offers ultra-low

capacitances for higher switching frequency

operations.

Table 1: Device summary

Order code

Marking

Package

Packaging

STR1P2UH7

1L2U

SOT-23

Tape and reel

For the P-channel Power MOSFET the actual polarity of the voltages and the current must be

reversed.

D (3)

G (1)

S (2)