STS1DN45K3 datasheet(3/10 Pages) STMICROELECTRONICS

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STS1DN45K3

Electrical ratings

Doc ID 17338 Rev 1

3/10

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

450

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

0.5

Drain current (continuous) at TC = 100 °C

0.32

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C (dual operation)

1.7

Total dissipation at TC = 25 °C (single operation)

1.3

IAR

Avalanche current, repetitive or not-repetitive (pulse

width limited by Tj max)

0.5

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

TBD

dv/dt (2)

ISD ≤ 0.5 A, di/dt ≤ TBD A/µs, VPeak < V(BR)DSS

Peak diode recovery voltage slope

TBD

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-amb

(1)

When mounted on FR4 board (steady state)

Thermal resistance junction-amb max

(single operation)

62.5

°C/W

Thermal resistance junction-amb max

(dual operation)

°C/W

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