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STU12N60M2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STU12N60M2
Description  Extremely low gate charge
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STU12N60M2 Datasheet(HTML) 1 Page - STMicroelectronics

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May 2015
DocID027901 Rev 1
1/12
This is information on a product in full production.
www.st.com
STU12N60M2
N-channel 600 V, 0.
395 Ω typ., 9 A MDmesh™ M2
Power MOSFET in an IPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STU12N60M2
600 V
0.
450 Ω
9 A
85 W
•
Extremely low gate charge
•
Excellent output capacitance (COSS) profile
•
100% avalanche tested
•
Zener-protected
Applications
•
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STU12N60M2
12N60M2
IPAK
Tube
3
2
1
TAB
IPAK


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