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T635T-8T Datasheet(PDF) 4 Page - STMicroelectronics

Part # T635T-8T
Description  6 A Snubberless™ Triac
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T635T-8T Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
T635T-8T
4/9
DocID024571 Rev 3
Figure 5. On-state characteristics (maximum
values)
Figure 6. Surge peak on-state current versus
number of cycles
ITM(A)
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
j max :
V
to = 0.85 V
R
d = 75 mW
T
j = 150 °C
T
j = 25 °C
VTM(V)
ITSM(A)
0
5
10
15
20
25
30
35
40
45
50
1
10
100
1000
Non repetitive
Tj initial=25 °C
Repetitive
TC= 135 °C
Number of cycles
One cycle
t = 20 ms
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I2t
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
ITSM A), I²t (A²s)
(
100
1000
0.01
0.10
1.00
10.00
dI/dt limitation: 100 A/µs
I
TSM
I²t
T
j initial=25 °C
Sinusoidal pulse with
width t <10 ms
p
10
tp(ms)
VGT[Tj] / VGT[Tj = 25 °C]
IGT[Tj] / IGT[Tj = 25 °C],
0.0
0.5
1.0
1.5
2.0
-50
-25
0
25
50
75
100
125
150
I
GT Q1-Q2
I
GT Q3
V
GT
Tj(°C)
Figure 9. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
Figure 10. Relative variation of holding current
and latching current versus junction
temperature (typical values)
0
1
2
3
4
5
25
50
75
100
125
150
V
D=VR=402V
(dV/dt) > 5 kV/µs
dV/dt [Tj] / dV/dt [Tj = 150 °C]
Tj (°C)
IH, IL[Tj] / IH, IL[Tj = 25 °C]
0.0
0.5
1.0
1.5
2.0
-50
-25
0
25
50
75
100
125
150
IH
IL
T (°C)
j



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