T1235T-8T datasheet(4/9 Pages) STMICROELECTRONICS

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Characteristics

T1235T-8T

4/9

DocID024572 Rev 3

Figure 5. On-state characteristics (maximum

values)

Figure 6. Surge peak on-state current versus

number of cycles

I(A)

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

j=25 °C

j=150 °C

(V)

T max:

V = 0.85 V

R = 37 m

I(A)

TSM

100

1000

Non repetitive

Tj initial=25 °C

Non repetitive

Tj initial=25 °C

Repetitive

TC=131 °C

Number of cycles

One cycle

t = 20 ms

Figure 7. Non repetitive surge peak on-state

current and corresponding values of I2t

Figure 8. Relative variation of gate trigger

current and gate voltage versus junction

temperature (typical values)

(A), I²t (A²s)

TSM

100

1000

0.01

0.10

1.00

10.00

sinusoidal pulse with width t <10 ms

t(ms)

I²t

TSM

T initial = 25 °C

dl/dt limitation: 100 A / µs

I , V

[T ] / I , V

[T = 25 °C]

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

T (°C)

Q1 - Q2

IQ3

Figure 9. Relative variation of static dV/dt

immunity versus junction temperature (typical

values)

Figure 10. Relative variation of holding current

and latching current versus junction

temperature (typical values)

100

125

150

dV/dt [Tj] / dV/dt [Tj = 150 °C]

Tj(°C)

VD=VR= 402 V

I , I [T ] / I , I [T = 25 °C]

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

T (°C)

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