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2N6451 Datasheet(PDF) 1 Page - InterFET Corporation |
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2N6451 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  01/99 B-25 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C 2N6451 2N6452 Reverse Gate Source Voltage – 20 V – 25 V Reverse Gate Drain Voltage – 20 V – 25 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 360 mW 360 mW Power Derating 2.88 mW/°C 2.88 mW/°C TOÐ72 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case At 25°C free air temperature: 2N6451 2N6452 Process NJ132L Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 20 – 25 V IG = – 1 µA, VDS = ØV – 0.1 nA VGS = – 10V, VDS = ØV Gate Reverse Current IGSS – 0.5 nA VGS = – 15V, VDS = ØV – 0.2 µA VGS = – 10V, VDS = ØV TA = 125°C – 1 µA VGS = – 15V, VDS = ØV TA = 125°C Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 3.5 – 0.5 – 3.5 V VDS = 10V, ID = 0.5 nA Drain Saturation Current (Pulsed) IDSS 520520 mA VDS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source | Yfs | 15 30 15 30 mS VDS = 10V, ID = 5 mA f = 1 kHz Forward Transmittance mS VDS = 10V, ID = 15 mA f = 1 kHz Common Source | Yos | 50 50 µS VDS = 10V, ID = 5 mA f = 1 kHz Output Conductance µS VDS = 10V, ID = 15 mA f = 1 kHz Common Source Ciss 25 25 pF VDS = 10V, ID = 5 mA f = 1 kHz Input Capacitance pF VDS = 10V, ID = 15 mA f = 1 kHz Common Source Reverse Crss 55 pF VDS = 10V, ID = 5 mA f = 1 kHz Transfer Capacitance pF VDS = 10V, ID = 15 mA f = 1 kHz Equivalent Short Circuit ¯eN 510 nV/ √Hz VDS = 10V, ID = 5 mA f = 10 kHz Input Noise Voltage 38 nV/ √Hz VDS = 10V, ID = 5 mA f = 1 kHz Noise Figure NF 1.5 2.5 dB VDS = 10V, ID = 5 mA f = 10 Hz RG = 10 kΩ ¥ Audio Amplifiers ¥ Low-Noise, High Gain Amplifiers ¥ Low-Noise Preamplifiers 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-25 |
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