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L6717ATR Datasheet(PDF) 52 Page - STMicroelectronics |
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L6717ATR Datasheet(HTML) 52 Page - STMicroelectronics |
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52 / 57 page ![]() LTB Technology® L6717A 52/57 DocID024465 Rev 1 12 LTB Technology® LTB Technology ® further enhances the performance of dual-edge asynchronous systems by reducing the system latencies and immediately turning ON all the phases to provide the correct amount of energy to the load. By properly designing the LTB network as well as the LTB gain, the undershoot and the ring-back can be minimized also optimizing the output capacitors count. LTB Technology ® applies only to the CORE Section. LTB Technology ® monitors the output voltage through a dedicated pin detecting load- transients with selected dV/dt, it cancels the interleaved phase-shift, turning-on simultaneously all phases. it then implements a parallel, independent loop that reacts to load-transients bypassing E/A latencies. LTB Technology ® control loop is reported in Figure 19. Figure 19. LTB Technology® control loop (CORE section) The LTB detector is able to detect output load transients by coupling the output voltage through an R LTB - C LTB network. After detecting a load transient, the LTB Ramp is reset and then compared with the COMP pin level. The resulting duty-cycle programmed is then OR- ed with the PWMx signal of each phase by-passing the main control loop. All the phases will then be turned-on together and the EA latencies results bypassed as well. Sensitivity of the load transient detector can be programmed in order to control precisely both the undershoot and the ring-back. R LTB - C LTB is designed according to the output voltage deviation dV OUT which is desired the controller to be sensitive as follow: LTB technology® design tips. – Decrease R LTB to increase the system sensitivity making the system sensitive to smaller dV OUT . – Increase C LTB to increase the system sensitivity making the system sensitive to higher dV/dt. Ref FB COMP VSEN PWM L/N ESR C O d V COMP V OUT Z F(s) Z FB(s) VID Monitor R LTB C LTB PWM_BOOST LTB Ramp LTB LT Detect LT Detect R LTB dVOUT 25 μA ------------------ = C LTB 1 2 π NR LTB F SW ⋅⋅ ⋅ -------------------------------------------------- = |
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