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ST72321R7-Auto Datasheet(PDF) 203 Page - STMicroelectronics |
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ST72321R7-Auto Datasheet(HTML) 203 Page - STMicroelectronics |
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203 / 243 page ![]() ST72321xx-Auto Electrical characteristics Doc ID 13829 Rev 1 203/243 19.8 I/O port pin characteristics 19.8.1 General characteristics Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. Table 126. I/O port pin general characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage(1) CMOS ports 0.3xVDD V VIH Input high level voltage(1) 0.7xVDD Vhys Schmitt trigger voltage hysteresis(2) 0.7 IINJ(PIN) (3) Injected current on PC6 pin (Flash devices only) VDD =5V 0+4 mA Injected current on an I/O pin ±4 I INJ(PIN) (3) Total injected current (sum of all I/O and control pins) ±25 IL Input leakage current VSS < VIN < VDD ±1 µA IS Static current consumption Floating input mode(4) 400 RPU Weak pull-up equivalent resistor(5) VIN =VSS VDD = 5V 50 120 250 k CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time(1) CL = 50pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time(1) 25 tw(IT)in External interrupt pulse time(6) 1tCPU 1. Data based on characterization results, not tested in production. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 3. When the current limitation is not possible, the VIN maximum must be respected, otherwise refer to IINJ(PIN) specification. A positive injection is induced by VIN >VDD while a negative injection is induced by VIN <VSS. Refer to Section 19.2.2: Current characteristics for more details. 4. Configuration not recommended. All unused pins must be kept at a fixed voltage. This can be done by using the output mode of the I/O, for example, and leaving the I/O unconnected on the board or by an external pull-up or pull-down resistor (see Figure 82). Static peak current value taken at a fixed VIN value, based on design simulation and technology characteristics, not tested in production. This value depends on VDD and temperature values. 5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics described in Figure 83). 6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. |
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