STM8S007C8 datasheet(58/92 Pages) STMICROELECTRONICS

58 / 92 page

Electrical characteristics

STM8S007C8

58/92

DocID022171 Rev 5

9.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA. fHSE

High speed internal RC oscillator (HSI)

Figure 14. Typical HSI frequency variation vs VDD at 3 temperatures

Table 31. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of HSI oscillator

Trimmed by the

CLK_HSITRIMR register

for given VDD and TA

conditions

-1.0(1)

-1.0

Accuracy of HSI oscillator

(factory calibrated)

VDD = 5 V, TA = 25 °C

VDD  5 V, 

-40 °C

T

A  85 °C

-5

tsu(HSI)

HSI oscillator wakeup

time including calibration

1.0(1)

Guaranteed by design, not tested in production.

µs

IDD(HSI)

HSI oscillator power

consumption

170

250(2)

Data based on characterization results, not tested in production

µA

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