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STM32F038X6 Datasheet(PDF) 64 Page - STMicroelectronics |
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STM32F038X6 Datasheet(HTML) 64 Page - STMicroelectronics |
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64 / 102 page  Electrical characteristics STM32F038x6 64/102 DocID026079 Rev 5 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 19 for standard I/Os, and in Figure 20 for 5 V-tolerant I/Os. The following curves are design simulation results, not tested in production. RPU Weak pull-up equivalent resistor (3) VIN = VSS 25 40 55 kΩ RPD Weak pull-down equivalent resistor(3) VIN = - VDDIOx 25 40 55 kΩ CIO I/O pin capacitance - - 5 - pF 1. Data based on design simulation only. Not tested in production. 2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 43: I/O current injection susceptibility. 3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). Table 44. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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