STM32F302XD datasheet(114/168 Pages) STMICROELECTRONICS

114 / 168 page

Electrical characteristics

STM32F302xD STM32F302xE

114/168

DocID026900 Rev 4

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 36 and Figure 37 for standard I/Os.

Figure 36. TC and TTa I/O input characteristics - CMOS port

Ilkg

Input leakage

current (3)

TC, FT and FTf I/O

TTa I/O in digital mode

VSS ≤VIN ≤VDD

±0.1

µA

TTa I/O in digital mode

VDD ≤VIN ≤VDDA

TTa I/O in analog mode

VSS ≤VIN ≤VDDA

±0.2

FT and FTf I/O(4)

VDD ≤VIN ≤5 V

RPU

Weak pull-up

equivalent resistor(5)

VIN = VSS

RPD

Weak pull-down

equivalent resistor(5)

VIN = VDD

CIO

I/O pin capacitance

1. Data based on design simulation.

2. Tested in production.

3. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 65: I/O

current injection susceptibility.

4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled.

5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimum (~10% order).

Table 66. I/O static characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

STM32F302XD Datasheet(PDF) 114 Page - STMicroelectronics

STM32F302XD Datasheet(HTML) 114 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL