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STM32F302XD Datasheet(PDF) 146 Page - STMicroelectronics |
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STM32F302XD Datasheet(HTML) 146 Page - STMicroelectronics |
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146 / 168 page ![]() Electrical characteristics STM32F302xD STM32F302xE 146/168 DocID026900 Rev 4 6.3.24 VBAT monitoring characteristics Table 91. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50 - K Ω Q Ratio on VBAT measurement - 2 - - Er(1) 1. Guaranteed by design, not tested in production. Error on Q -1 - +1 % TS_vbat(1)(2) 2. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the VBAT 1mV accuracy 2.2 - - µs |
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