STM32L151XE datasheet(61/134 Pages) STMICROELECTRONICS

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STM32L151xE STM32L152xE

Electrical characteristics

113

6.3.2

Embedded reset and power control block characteristics

The parameters given in the following table are derived from the tests performed under the

conditions summarized in Table 13.

Junction temperature range

6 suffix version

–40

105

°C

7 suffix version

–40

110

1. When the ADC is used, refer to Table 55: ADC characteristics.

2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and

VDDA can be tolerated during power-up .

3. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled.

4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 71: Thermal characteristics

on page 129).

5. In low-power dissipation state, TA can be extended to -40°C to 105°C temperature range as long as TJ does not exceed TJ

max (see Table 71: Thermal characteristics on page 129).

Table 13. General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Max

Unit

Table 14. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tVDD(1)

VDD rise time rate

BOR detector enabled

∞

µs/V

BOR detector disabled

1000

VDD fall time rate

BOR detector enabled

∞

BOR detector disabled

1000

TRSTTEMPO(1) Reset temporization

VDD rising, BOR enabled

3.3

VDD rising, BOR disabled(2)

0.4

0.7

1.6

VPOR/PDR

Power on/power down reset

threshold

Falling edge

1.5

1.65

Rising edge

1.3

1.5

1.65

VBOR0

Brown-out reset threshold 0

Falling edge

1.67

1.7

1.74

Rising edge

1.69

1.76

1.8

VBOR1

Brown-out reset threshold 1

Falling edge

1.87

1.93

1.97

Rising edge

1.96

2.03

2.07

VBOR2

Brown-out reset threshold 2

Falling edge

2.22

2.30

2.35

Rising edge

2.31

2.41

2.44

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