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AS4C8M16D1 Datasheet(PDF) 39 Page - Alliance Semiconductor Corporation |
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AS4C8M16D1 Datasheet(HTML) 39 Page - Alliance Semiconductor Corporation |
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39 / 64 page ![]() AS4C8M16D1 Alliance Memory Inc. Confidential 39 Rev. 1.1 Feb. /2009 Figure 18. Write Burst Nom, Min, and Max tDQSS CK CK COMMAND WRITE NOP NOP NOP Bank , Col n ADDRESS DQS DQ tDQSS (nom) Don’t Care DM T0 T1 T2 T3 T4 T5 T6 T7 DI n T8 T9 T10 T11 NOP NOP DQS DQ tDQSS (min) DM DI n DQS DQ tDQSS (max) DM DI n DI n = Data In for column n 3 subsequent elements of Data are applied in the programmed order following DI n A non-interrupted burst of 4 is shown A10 is LOW with the WRITE command (AUTO PRECHARGE disabled) DM=UDM & LDM |
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