ATF-331M4 datasheet(5/15 Pages) BOARDCOM

5 / 15 page

Notes:

1. Measurements

made

fixed

tuned

production test board that was tuned

for optimal gain match with reasonable

noise figure at 4V 60 mA bias. This circuit

represents a trade-off between an optimal

noise match, maximum gain match and

a realizable match based on production

test board requirements. Circuit losses

have been de-embedded from actual

measurements.

Quiescent drain current, Idsq, is set

with zero RF drive applied. As P1dB is

approached, the drain current may increase

or decrease depending on frequency and

dc bias point. At lower values of Idsq the

device is running closer to class B as power

output approaches P1dB. This results in

higher P1dB and higher PAE (power added

efficiency) when compared to a device that

is driven by a constant current source as is

typically done with active biasing.

ATF-331M4 Typical Performance Curves, continued

Figure 12. Fmin vs. Frequency at 4 V, 60 mA.

FREQUENCY (GHz)

010

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 14. Fmin & Ga vs. Frequency and Temp. Vd =

4 V , Ids = 60 mA.

FREQUENCY (GHz)

85C

25C

-40C

2.0

1.5

1.0

0.5

Figure 15. P1dB, OIP3 vs. Frequency and Temp at

Vd = 4 V , Ids = 60 mA.

FREQUENCY (GHz)

85C

25C

-40C

Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1,2] at

3.9 GHz.

Idsq (mA)

100

P1dB

OIP3

Gain

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Figure 13. Associated Gain vs. Frequency at 4 V ,

60 mA.

FREQUENCY (GHz)

010

Figure 17. OIP3, P1dB, NF at 5.8 GHz.

Idsq (mA)

100

P1dB

OIP3

Gain

3.5

3.0

2.5

2.0

1.5

1.0

0.5

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