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AS4C64M32MD1 Datasheet(PDF) 39 Page - Alliance Semiconductor Corporation

Part # AS4C64M32MD1
Description  Power Down Mode
PDF  43 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C64M32MD1 Datasheet(HTML) 39 Page - Alliance Semiconductor Corporation

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AS4C64M32MD1
Confidential
Page 39
V.1.0 Sept. 2014
AC CHARACTERISTICS
-5
PARAMETER
SYMBOL MIN
MAX UNITS NOTES
Output data access time from CK/CK
t
AC
2
5
ns
3
CK high-level width
t
CH
0.45
0.55
t
CK
CK low-level width
t
CL
0.45
0.55
t
CK
Clock cycle time
CL = 3
t
CK (3)
5
-
ns
1
DQ and DM input hold time relative to DQS
t
DH
0.4
ns
5,6
DQ and DM input setup time relative to DQS
t
DS
0.4
ns
5,6
DQ and DM input pulse width (for each input)
t
DIPW
1.4
ns
Access window of DQS from CK/CK
t
DQSCK
2
5
ns
DQS input high pulse width
t
DQSH
0.4
0.6
t
CK
DQS input low pulse width
t
DQSL
0.4
0.6
t
CK
DQS-DQ skew, DQS to last DQ valid,
t
DQSQ
0.4
ns
1
per group, per access
Write command to first DQS latching
t
DQSS
0.7
1.2
t
CK
transition
Half clock period
t
HP
t
CH,
ns
t
CL
Data-out high-impedance window
t
HZ
0.4
0.6
t
CK
from CK/CK
Data-out low-impedance window
t
LZ
1
ns
from CK/CK
Address and control input hold time
t
IH
0.9
ns
1
Address and control input setup time
t
IS
0.9
ns
1
LOAD MODE REGISTER command
t
MRD
2
t
CK
cycle time
DQ-DQS hold, DQS to first DQ to go
t
QH
t
HP
ns
non-valid, per access
-
t
QHS
Data hold skew factor
t
QHS
0.5
ns
ACTIVE to PRECHARGE command
t
RAS
40
70K
ns
ACTIVE to READ with Auto precharge
t
RAP
15
ns
command
ACTIVE to ACTIVE/AUTO REFRESH
t
RC
55
ns
command period
AUTO REFRESH command period
t
RFC
72
ns
ACTIVE to READ or WRITE delay
t
RCD
15
ns
PRECHARGE command period
t
RP
15
ns
AC Timing Parameters & Specification



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