MDF16N50GTH datasheet(3/8 Pages) MGCHIP

3 / 8 page

Dec. 2014. Version 1.1

MagnaChip Semiconductor Ltd.

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

0.3

0.4

0.5

0.6

0.7

GS=10.0V

GS=20V

D,Drain Current [A]

Notes

1. 250㎲ Pulse Test

2. T

C=25

℃

gs=5.5V

=6.0V

=6.5V

=7.0V

=8.0V

=10.0V

=15.0V

DS,Drain-Source Voltage [V]

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1. V

GS = 0 V

2. I

= 250㎂

J, Junction Temperature [

oC]

-55℃

25℃

* Notes ;

1. V

DS=30V

150℃

GS [V]

0.0

0.2

0.4

0.6

0.8

1.0

1.2

150

※ Notes :

1. V

GS = 0 V

2. 250㎲ Pulse Test

SD, Source-Drain Voltage [V]

-50

100

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

= 8A

J, Junction Temperature [

oC]

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